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In order to achieve further energy saving, the committee explored the technical trend of the power semiconductor devices and summarized the issues to be addressed in the future. IGBT development is now been shifted to a comprehensive technological improvement of its assembling technology as well as its loss reduction one. Also, the development of RC-IGBT which integrates IGBT and FWD into one element has become popular. In power MOSFETs, superior low on resistance SJ- MOSFETs are progressing on the 600 V class with the development of fine SJ technology. In power IC technologies, low loss and high breakdown characteristics have been continuously developed in lateral MOSFETs and IGBTs by the improvement of RESURF and high-precision isolation technologies in SOI substrate. Also, progresses of gate driving ICs are now actively reported about the driving technologies for SiC and GaN power devices. In the WBG power device field, the SiC MOSFETs have started to be in the market and their high performances are beginning to be reflected in actual products. Furthermore, SiC trench MOSFETs are now being paid attention. From now on, it is strongly required to develop the power circuit and packaging technologies that can make use of the device performances. Although mass production of GaN HEMTs began, there are still many technical problems to be improved such as normally-off characteristic, future technological progress is strongly expected. |
