No. 1082
	A revolution of the recent power device development
	Investigating R&D Committee on power device and power IC technologies
	This report will describe the latest and the great improvement of the power semiconductor devices such as IGBT, power MOSFET and wide band gap semiconductor devices. The contents of this report are mainly summarized the matters from 2002 to 2005. The trench FS-IGBT and the superjunction MOSFET, which are the most advanced silicon power device structures, started to be in mass-production and are applied to a variety of power electronics application. And, recent innovations of the wide band gap semiconductor devices like SiC MOSFET begins to look practicable. This reports will also discuss which direction the innovation should proceed to.
	©2007. The Institute of Electrical Engineers of Japan